Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric
- Journal
- Advanced Electronic Materials
- Vol
- 6(7)
- Page
- 2000091
- Year
- 2020
This paper, “Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric" was published in Advanced Electronic Materials, and the image was selected as the Front Cover of 7/2020