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Publications Quantum Materials and Devices Laboratory

Patents

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Total 124건 1 페이지

  • International Registration

  • 124
    Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device (Registration No. US 12,314,841 B2; 2025. 05. 27)
  • 123
    Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device (Registration No. US 11,793,006 B2; 2023. 10. 17)
  • 122
    Soft memristor for soft neuromorphic system (Registration No. US 11,552,267 B2; 2023. 01. 10)
  • 121
    Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared thereby (Registration No. US 11,268,210 B2; 2022. 03. 08)
  • 120
    Electronic device using two dimensional semiconductor material (Registration No. US 11,024,759 B2; 2021. 06. 01)
  • 119
    Memory and logic device-integrated soft electronic system (Registration No. US 10,847,577 B2; 2020. 11. 24)
  • 118
    Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same (Registration No. US 10777639 B2; 2020. 09. 15)
  • 117
    Resistive memory device and method of fabricating the same (Registration No. US 8,980,721 B2; 2015.03.17)
  • 116
    Active metamaterial device and manufacturing method of the same (Registration No. US 8,890,767 B2; 2014.11.18)
  • 115
    Resistive memory device and method for fabricating the same (Registration No. US 8,344,344; 2013.01.01)
  • 114
    Resistive memory device and method for fabricating the same (Registration No. US 8,203,140; 2012.06.19)
  • 113
    Memory devices including dielectric thin film and method of manufacturing the same (Registration No. US 7,960,774; 2011.06.14)
  • 112
    Method of manufacturing nano size-gap electrode device (Registration No. US 7,537,883 B2; 2009.05.26)
  • 111
    Tri-gated molecular field effect transistor and method of fabricating the same (Registration No. US 7,436,033 B2; 2008.10.14)
  • 110
    Method for manufacturing nano-gap electrode device (Registration No. US 7,413,973 B2; 2008.08.19)